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VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A FEATURES * High current capability * High surge capability * Industrial standard package RoHS COMPLIANT * 3000 VRMS isolating voltage with non-toxic substrate * Lead (Pb)-free * Designed and qualified for industrial level SUPER MAGN-A-PAKTM TYPICAL APPLICATIONS * Motor starters PRODUCT SUMMARY IT(AV) or IF(AV) 500 A * DC motor controls - AC motor controls * Uninterruptable power supplies MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) or IF(AV) CHARACTERISTICS VALUES 500 TC 82 785 TC 50 Hz 60 Hz 50 Hz 60 Hz 82 17.8 18.7 1591 1452 15 910 800 to 1600 Range - 40 to 150 - 40 to 130 UNITS A C A IT(RMS) ITSM or IFSM I2 t I2t VDRM/VRRM TStg TJ C kA kA2s kA2s V C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 08 VSK.500 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 1500 1700 100 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV), IF(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave 180 conduction, half sine wave at TC = 82 C t = 10 ms Maximum peak, one-cycle, non-repetitive on-state surge current ITSM, IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state or forward voltage drop Maximum holding current Maximum latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM VFM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum VALUES 500 82 785 17.8 18.7 15.0 15.7 1591 1452 1125 1027 15 910 0.85 0.93 0.36 0.32 1.50 500 1000 kA2s V kA2s kA UNITS A C A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = 25 C, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 VALUES 1000 2.0 s 200 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = 130 C, linear to VD = 80 % VDRM t=1s TJ = TJ maximum, rated VDRM/VRRM applied VALUES 1000 3000 100 UNITS V/s V mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Power Modules), 500 A (SUPER MAGN-A-PAK TRIGGERING PARAMETER Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) +IGM +VGM -VGM IGT VGT IGD VGD TJ = 25 C, Vak 12 V TJ = TJ maximum TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 10 2.0 3.0 20 5.0 200 3.0 10 0.25 UNITS W A V mA V mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink SMAP to heatsink Mounting torque 10 % busbar to SMAP Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJC RthC-hs A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. DC operation TEST CONDITIONS VALUES - 40 to 130 - 40 to 150 0.065 K/W 0.02 6-8 Nm 12-15 1500 g UNITS C SUPER MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.009 0.011 0.014 0.021 0.037 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.022 0.038 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A Maximum Average On-state Power Loss (W) 1000 900 800 700 600 500 400 RMS Limit 300 200 100 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A) Conduction Period Maximum Allowable Case T emperature (C) 130 120 110 100 90 30 80 70 60 0 100 200 300 400 500 600 Average On-state Current (A) 60 90 120 180 Conduc tion Angle VSK.500.. S eries R thJC (DC) = 0.065 K/ W DC 180 120 90 60 30 VSK.500.. S eries Per Junc tion TJ = 130C Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (C) Peak Half S Wave On-state Current (A) ine 130 120 110 100 90 80 70 60 0 100 200 300 400 500 600 700 800 900 Average On-state Current (A) 30 60 90 120 180 Conduction Period VSK.500.. S eries R thJC (DC) = 0.065 K/ W 16000 15000 14000 13000 12000 11000 10000 9000 8000 7000 1 At Any Rated Loa d Cond ition And With Rated VRRM Ap p lied Following S urge. Initial T = 130C J @60 Hz 0.0083 s @50 Hz 0.0100 s DC VSK.500.. S eries Per Junction 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Los (W) s Peak Half S Wave On-state Current (A) ine 700 600 500 400 300 200 100 0 0 100 200 300 400 500 Average On-state Current (A) Conduc tion Angle 18000 16000 14000 12000 10000 8000 180 120 90 60 30 R MSLimit Ma ximum Non R etitive S ep urge Current Versus Pulse T rain Dura tion. Control Of Cond uc tion Ma y Not Be Maintained. Initial T = 130C J No Voltage Reapplied Rated VRRMReapplied VSK.500.. S eries Per Junction TJ= 130C VSK.500.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1 6000 0.01 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Power Modules), 500 A (SUPER MAGN-A-PAK 750 700 180 650 120 0. 16 90 600 K/ 60 W 550 0.2 30 K/ 500 Conduction Angle W 450 400 0.3 K/ W 350 0.4 300 K/ W 250 0.6 K 200 /W 150 VSK.500.. S eries Per Module 100 T = 130C 50 J 0 0 100 200 300 400 500 600 700 800 0 20 T otal R Output Current (A) MS Maximum T otal On-state Power Loss (W) 09 0. W K/ Maximum Allowable Ambient T emperature (C) Fig. 7 - On-State Power Loss Characteristics 12 0. W K/ S R th A = 07 0. W K/ e lt -D a R 40 60 80 100 120 3000 Maximum T otal Power Loss (W) 2500 2000 0.0 5 180 (S ine) 180 (R ect) 0. 02 Rt A hS 0. 03 K/ W = 01 0. K/ W W K/ ta el -D 1500 1000 500 0 0 200 400 600 800 1000 0 2 x VSK.500.. Series S ingle Phase B ridge Connected T J = 130C K/ W 0.0 8K /W 0.12 K/ W 0.2 K /W R 20 40 60 80 100 120 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) Fig. 8 - On-State Power Loss Characteristics 4500 Maximum T otal Power Loss (W) 4000 3500 3000 2500 2000 1500 1000 500 0 0 250 500 750 0 1000 1250 1500 20 40 60 80 100 120 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) 3 x VSK.500.. S eries T hree Phase B ridge Connected T J = 130C 120 (R ect) R SA th = 0. 02 K/ W 0.0 3K /W 0. 01 K/ W -D el ta R 0.0 5K /W 0.08 K/ W 0.2 K/ W Fig. 9 - On-State Power Loss Characteristics Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A T rans ient T hermal Impedance Z thJC (K W) / 0.1 VSK.500.. S eries Per Junc tion 10000 Instantaneous On-state Current (A) 1000 TJ= 25C TJ= 130C 0.01 S teady S tate Value: RthJC = 0.065 K/ W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 VSK.500.. S eries Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-s tate Voltage (V) S quare Wave Pulse Duration (s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM (2) PGM (3) PGM (4) PGM (a) = 10W, = 20W, = 40W, = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms Tj=25 C T j=130 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) VSK.500.. S eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Power Modules), 500 A (SUPER MAGN-A-PAK ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - T 2 500 3 - 16 4 PbF 5 Module type Circuit configuration (see end of datasheet) Current rating Voltage code x 100 = VRRM (see Voltage Ratings table) Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT 1 ~ VSKH 1 ~ VSKL 1 ~ + 2 2 + 2 + 3 - 3 4 (K1) 5 (G1) - 3 7 (K2) 6 (G2) 4 (K1) 7 (K2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95283 Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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